Chen, Cheng-YuanCheng-YuanChenLee, Jia-RenJia-RenLeeLu, Chien-RongChien-RongLuLiu, Hsiang-LinHsiang-LinLiuSun, Li-WenLi-WenSunHAO-HSIUNG LIN2018-09-102018-09-102008-02https://www.scopus.com/inward/record.uri?eid=2-s2.0-38749141758&doi=10.1016%2fj.jpcs.2007.07.033&partnerID=40&md5=4b5cfe44f836ebe0fe768f4d2de10454The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency. © 2007 Elsevier Ltd. All rights reserved.application/pdfapplication/pdfA. Quantum well; A. Semiconductors; D. Optical propertiesGallium compounds; Indium compounds; Optical properties; Semiconductor materials; Wave functions; Optical responses; Strain relief buffer layers; Semiconductor quantum wellsjournal article10.1016/j.jpcs.2007.07.0332-s2.0-38749141758WOS:000253874700050