Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition

Chang, Y.H.Y.H.ChangLin, C.A.C.A.LinLiu, Y.T.Y.T.LiuChiang, T.H.T.H.ChiangLin, H.Y.H.Y.LinHuang, M.L.M.L.HuangLin, T.D.T.D.LinPi, T.W.T.W.PiKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272012https://scholars.lib.ntu.edu.tw/handle/123456789/443343Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer depositionjournal article10.1063/1.47628332-s2.0-84868024251https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868024251&doi=10.1063%2f1.4762833&partnerID=40&md5=f12c400ffc6eb1881af35a33887e93ac