YI-JAN EMERY CHENJin, ZhenrongZhenrongJinKuo W.-M.LLee, JongsooJongsooLeeTretiakov, Youri V.Youri V.TretiakovCressler, John D.John D.CresslerLaskar, JoyJoyLaskarFreeman, GregGregFreeman2018-09-102018-09-10200500189480http://www.scopus.com/inward/record.url?eid=2-s2.0-19544380422&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/314312An integrated low-power low phase-noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of -99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is -0.547 GHz/V. © 2005 IEEE.1/f noise; Heterojunction bipolar transistor (HBT); Ka-band; Line inductor; Low power; Microstrip line; Phase noise; Silicon-germanium (SiGe); Voltage-controlled oscillator (VCO)[SDGs]SDG7Electric inductors; Frequencies; Heterojunction bipolar transistors; Microstrip lines; Resonators; Semiconducting germanium; Semiconducting silicon; Spurious signal noise; Voltage control; 1/f noise; K α-band; Line inductors; Low power; Phase noise; Silicon-germanium (SiGe); Variable frequency oscillatorsjournal article10.1109/TMTT.2005.8470632-s2.0-19544380422