劉致為臺灣大學：電子工程學研究所蕭舜文Hsiao, Shun-WenShun-WenHsiao2007-11-272018-07-102007-11-272018-07-102006http://ntur.lib.ntu.edu.tw//handle/246246/57595This thesis focuses on simulation of solid-state image sensor. The parameters used are based on complementary metal-oxide-semiconductor process (CMOS) and CMOS image sensor (CIS) technology. The characteristics of a solid-state image sensor could be divided into two parts – electrical and optical. In this work, both of them are combined into one simulation structure, therefore, provide a good way to understand and design a pixel. The simulation of fundamental behavior of p-n photodiode and pinned photodiode is presented. And then optical structure, microlens, is put into the consideration together with photodiode simulation. The photoresponse mentioned in the following discussion is in terms of photocurrent of photodiode.Contents List of Figures I List of Tables V Chapter 1 Introduction 1 Chapter 2 p-n Junction Photoresponse Characteristics 2.1 Introduction 5 2.2 Optical Absorption in Silicon 7 2.3 p-n Junction Photodiode 12 2.4 Summary 24 References Chapter 3 Pinned Photodiode and Pixel Operation 3.1 Introduction 26 3.2 Pinned Photodiode 27 3.3 Pixel Operation Mode 31 3.4 Summary 39 References Chapter 4 Pixel Photoresponse with Microlens 4.1 Introduction 40 4.2 Microlens and Backend Dielectric Films 43 4.3 Modeling and Analysis 48 4.4 Simulation 52 4.5 Summary 54 References Chapter 5 Conclusion and Future Work 56en-US影像感測元件微透鏡CMOS Image SensorMicrolensthesis