Lai, Yu ShiuanYu ShiuanLaiYei, Jia WeiJia WeiYeiFu, Zi HaoZi HaoFuKUN-YOU LIN2024-04-032024-04-032023-01-019781665494182https://scholars.lib.ntu.edu.tw/handle/123456789/641740This paper presents a broadband 90-nm CMOS low-noise amplifier (LNA) for multi-band 5G millimeter-wave (mmW) applications. The second stage amplifier utilizes the transconductance (gm)-boosting technique to increase the gain peak at the high-frequency range and obtain a broadband performance. The measured small-signal gain is greater than 18.5 dB in the frequency range of 18 GHz to 45 GHz, and the measured gain is 18.3 dB/21.3 dB at 28 GHz/39 GHz, and the measured noise figure (NF) is less than 4.8 dB from 20 to 45 GHz. The 1 dB compression output power at 28 GHz and 39 GHz is -0.25 dBm and -0.34 dBm, respectively.5G | broadband low-noise amplifier (LNA) | CMOS | gm-boostingconference paper10.1109/APMC57107.2023.104397682-s2.0-85186722080https://api.elsevier.com/content/abstract/scopus_id/85186722080