吳育任Wu, Yuh-Renn臺灣大學:光電工程學研究所黃泓勛Huang, Hung-HsunHung-HsunHuang2010-07-012018-07-052010-07-012018-07-052009U0001-1808200920503500http://ntur.lib.ntu.edu.tw//handle/246246/188500本研究主要是在探討非極性及半極性氮化銦鎵/氮化鎵量子井在不同銦含量、井寬以及注入載子濃度的情況下對於發光極化特性的影響。為了找到一個擁有最佳的極化發光特性的長晶角度，研究中也討論了半極性氮化銦鎵的合金對於不同的長晶面的價電帶特性，藉此來探討量子井結構的形成對於極化發光特性之影響。而在本研究中則利用帕松、薛丁格方程以及k·p法來求解量子井中的位能以及電子電洞在量子井中的分佈，並且採用疊代的方法來求出這些方程在此系統中的解，進而求得非極性及半極性氮化銦鎵/氮化鎵量子井的發光極化率。從研究結果中可以發現，對於非極性“a”平面的量子井而言，相對於較濃的銦含量、較窄的量子井寬會使得被侷限之能階的能量差較大進而得到較大的發光極化率。然而，越多的載子注入量子井中會造成發光極化率的減少，其為當發光二極體在高功率應用上的一個缺點；除此之外也探討了半極性(10-1-3)、(11-22)以及θ=75度這些不同長晶面的量子井結構的極化發光特性。在本研究中，我們探討了非極性“a”平面及半極性量子井發光二極體設計最佳化的情況，這些研究對於液晶顯示器背光模組及雷射的應用上有極大的潛力，相信未來在實務面的發展上可以提供元件設計所需的資訊。This thesis discusses the optical characteristics of a nonpolar and semipolar InGaN/GaN quantum well with different indium compositions, quantum well widths, and injection carrier densities. Also, we have studied the properties of valence band structure of the semipolar InGaN alloy films with arbitrary crystal growth orientations to discuss the key issue of designing a polarized light source. The self-consistent Poisson and 6×6 k·p Schrödinger solver has been applied to study the band structures in nonpolar a-plane and semipolar InGaN-based quantum well light emitting diodes (LEDs). For nonpolar a-plane quantum well structure, we find that the larger indium composition and smaller well width make the energy separation of |Y''>-like state to |X''>-like state larger, and as a result enhance the polarization ratio of light. However, the polarization ratio decreases as the carrier injection increases, which might be a drawback for high power applications. The optical polarization properties of semipolar (10-1-3), (11-22),and θ=75 degree InGaN/GaN quantum well were also investigated. Basically, we have studied the optimization condition for designing the nonpolar a-plane and semipolar InGaN quantum well LED for applications, such as liquid crystal display backlight modules and lasers, which would be useful information for device designs.口試委員會審查表 i謝 ii文摘要 iv文摘要 vi錄 viii目錄 xi目錄 xix Introduction 1.1 III-V Nitride Compound Semiconductors 1.2 Characteristics of the InGaN/GaN QuantumWell Structures 2.2.1 Strain Effect 3.2.2 Spontaneous and Piezoelectric Polarization Effect 5.2.3 The Development of Nonpolar a-plane and mplane Quantum Well 7.2.4 The Development of Semipolar Quantum Well 12.3 Motivation 16.3.1 The Application Potential of Nonpolar and Semipolar for Liquid Crystal Display Backlight Module 18 Formalism 20.1 The Effects of Crystallographic Orientation 20.2 Self-consistent Model 27.2.1 Poisson Equation 29.2.2 6×6 k·p Schrödinger Method 34.2.3 Nonlinear Poisson Equation 40.3 Optical Properties of InGaN/GaN Quantum Well 42 Study of Polarization Properties of Light Emitted from aplane InGaN/GaN QuantumWell-based Light Emitting Diodes 46.1 Result and Discussion 48.2 Summary 61 Study of Polarization Properties of Light Emitted from the Semipolar InGaN/GaN Quantum Well-based Light Emitting Diodes 63.1 Strained InGaN Alloy Films on GaN Substrates with Different Growth Orientations 64.2 Semipolar InGaN/GaN Quantum Well Structure 68.2.1 Semipolar (10-1-3) Quantum Well 68.2.2 Semipolar (11-22) Quantum Well 74.2.3 Semipolar (θ=75 degree) Quantum Well 79.3 Summary 83 Conclusion 84eference 875963528 bytesapplication/pdfen-US非極性“a”平面半極性氮化銦鎵氮化鎵量子井帕松方程薛丁格方程k.p法極化率自發發光發光二極體nonpolara-planesemipolarInGaNGaNquantum wellPoisson equationSchrodinger equationk.p methodpolarization ratiospontaneous emissionLEDthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/188500/1/ntu-98-R96941106-1.pdf