M.-H. MaoD.-M. YehP.-W. LiuH.-L. ChenC.-T. PanHAO-HSIUNG LIN2018-09-102018-09-102003-10https://www.scopus.com/inward/record.uri?eid=2-s2.0-0344897206&partnerID=40&md5=90b2561b39d32a4f7bf855fd8174acdeA series of three-dimensional photonic crystals are fabricated. The existence of photonic bandgap is demonstrated in the near-infrared wavelength range and bandgap position shows red-shift with increasing feature size of photonic crystals.Deposition; Light transmission; Optical variables measurement; Oxidation; Scanning electron microscopy; Semiconducting gallium arsenide; Energy gap; Fabrication; Gallium arsenide; III-V semiconductors; Infrared devices; Nanostructures; Photonics; Auto-cloning technique; Face centered cubic structure; Optical transmission measurement; Photonic bandgap; Photonic crystals; Crystal structure; Photonic crystals; Feature sizes; Near Infrared; Near-infrared; Near-infrared wavelength; Three dimensional photonic crystals; Wavelength rangesconference paper10.1109/leos.2003.12531572-s2.0-0344897206