Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics

Chang, PenPenChangChiu, Han-ChinHan-ChinChiuLin, Tsung-DaTsung-DaLinHuang, Mao-LinMao-LinHuangChang, Wen-HsinWen-HsinChangWu, Shao-YunShao-YunWuWu, Kang-HuaKang-HuaWuHong, MinghweiMinghweiHongMINGHWEI HONG2012-10-192018-06-282012-10-192018-06-282011http://ntur.lib.ntu.edu.tw//handle/246246/242893en-USSelf-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectricsjournal article10.1143/APEX.4.114202http://ntur.lib.ntu.edu.tw/bitstream/246246/242893/-1/23.pdf