Optical Critical Dimension Metrology of HAR Micro and Sub-Micro Structures Using AI-Driven Optical Scatterometry for Advanced Semiconductor Packaging

LIANG-CHIA CHENDas, SurajitSurajitDasManutious, ManutiousManutiousManutiousOtani, YukitoshiTutsch, RainerYoshizawa, Toru2025-10-162025-10-16202597815106935790277786Xhttps://www.scopus.com/record/display.uri?eid=2-s2.0-105015139962&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/732668This article introduces an AI-driven optical scatterometry method with global sensitivity analysis (GSA) for OCD metrology in semiconductor sub-micron structures. It addresses challenges in measuring sub-micron high aspect ratio (HAR) features by integrating variance-based global sensitivity analysis (GSA) with deep ultraviolet (DUV) and short-wave infrared (SWIR) scatterometry, achieving less than 3% errors compared to AFM and SEM, and proving reliable for HAR metrology.falseglobal sensitivity analysis (GSA)high aspect ratio (HAR)optical critical dimension (OCD)Scatterometrysemiconductor advanced packagingsemiconductor metrologyOptical Critical Dimension Metrology of HAR Micro and Sub-Micro Structures Using AI-Driven Optical Scatterometry for Advanced Semiconductor Packagingconference paper10.1117/12.30752452-s2.0-105015139962