Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach

J. S. SuJ. B. KuoJAMES-B KUO2018-09-102018-09-102009-09http://scholars.lib.ntu.edu.tw/handle/123456789/351957Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approachconference paper10.1109/ctft.2009.53798422-s2.0-77950905585