National Taiwan University Dept Elect EngnKuo, Wei-Min LanceWei-Min LanceKuoCressler, John D.John D.CresslerYI-JAN EMERY CHENJoseph, Alvin J.Alvin J.Joseph2006-11-142018-07-062006-11-142018-07-062005-1015311309http://ntur.lib.ntu.edu.tw//handle/246246/200611150121755http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121755/1/2550.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-27144487421&doi=10.1109%2fLMWC.2005.856846&partnerID=40&md5=2a979f78b3a72af84217eedb1ba7c25bAn inductorless Ka-band silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) ring oscillator is presented. The Ka-band operation is achieved with the addition of a cross-coupled pair to the simple differential inverting amplifier of a single-stage ring oscillator. Implemented with 120-GHz SiGe HBTs, the circuit occupies an extremely compact active area of only 0.0108mm2 due to lack of inductors. The frequency is tunable from 28.36 to 31.96 GHz, and the single-sideband phase noise is 85.33 dBc/Hz at 1-MHz offset from 31.96 GHz. Operating on a 3-V supply, the total power consumption is 87mW. The resulting oscillator figure-of-merit is 156 dBc/Hz. To our knowledge, this oscillator achieves the best figure-of-merit while occupying the least active area, when compared with other state-of-the-art inductorless ring oscillators operating over a similar frequency range.application/pdf215903 bytesapplication/pdfzh-TWHeterojunction bipolar transistor (HBT)inductorlessKa-bandring oscillatorsilicon–germanium (SiGe)Heterojunction bipolar transistor (HBT); Inductorless; Ka-band; Ring oscillator; Silicon-germanium (SiGe)[SDGs]SDG7Inductorless; Ka-band; Ring oscillators; Silicon-germanium (SiGe); Electric inductors; Electric power utilization; Heterojunction bipolar transistors; Power amplifiers; Semiconducting gallium compounds; Oscillators (electronic)journal article10.1109/LMWC.2005.8568462-s2.0-27144487421http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121755/1/2550.pdf