Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer

Liang-Yu SuFinella LeeJian Jang HuangJIAN-JANG HUANG2018-09-102018-09-102014-02http://scholars.lib.ntu.edu.tw/handle/123456789/387155Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layerjournal article10.1109/ted.2013.2294337