Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

VITA PI-HO HU2022-04-252022-04-25202121628769https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108527783&doi=10.1149%2f2162-8777%2fac08d8&partnerID=40&md5=52d03ff28e61abe82544fa0c3fc9ad49https://scholars.lib.ntu.edu.tw/handle/123456789/607352This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future. ? 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.Economic and social effectsHafnium compoundsIron compoundsPower transistorsZirconium compoundsFerroelectric field effect transistorsLearning trajectoriesMemory windowPulse stimulationPulsewidthsRemnant polarizationsTrade offUltra-thinField effect transistorsIdentical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectoryjournal article10.1149/2162-8777/ac08d82-s2.0-85108527783