Terry Y.T. HungMeng-Zhan LiWei Sheng YunSui An ChouSheng-Kai SuEdward ChenSan Lin LiewYing-Mei YangKuang-I LinVincent HouT.Y. LeeHan WangAlbert ChengMinn-Tsong LinH.-S. Philip WongIuliana P. Radu2024-10-232024-10-232022-12-03https://scholars.lib.ntu.edu.tw/handle/123456789/722333We present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.conference paper10.1109/iedm45625.2022.10019321