Li, W.-T.W.-T.LiCheng, J.-H.J.-H.ChengWu, Y.-M.Y.-M.WuTIAN-WEI HUANG2020-06-112020-06-112013https://scholars.lib.ntu.edu.tw/handle/123456789/499598A 23.67-to-45-GHz voltage-controlled oscillator (VCO) using standard 90-nm CMOS technology is presented in this paper. A dual VCO with switchable inductor and varactor arrays is proposed and successfully implemented in the LC-VCO design. The proposed switchable inductor changes the inductance in-directly on radio frequency (RF) signal path, and brings minimum loading effect on the quality factor of the resonator. The VCO centered at 34.4 GHz achieves a wide tuning range of 62.1%. The measured phase noise is -100.8 dBc/Hz at 1 MHz offset from the carrier frequency of 23.67 GHz. The VCO has a core chip size of 0.35 × 0.65 mm 2 and consumes 16-20mW from a 1.2 V supply voltage. To the best of our knowledge, the proposed VCO has the highest FOM T of -194.3 among all reported above 10-GHz VCOs.[SDGs]SDG7A 23.67-to-45-GHz wide tuning range dual VCO with phase noise enhancement in 90-nm CMOS technologyconference paper10.1109/MWSYM.2013.66974782-s2.0-84893306671https://www.scopus.com/inward/record.uri?eid=2-s2.0-84893306671&doi=10.1109%2fMWSYM.2013.6697478&partnerID=40&md5=b9d142ce982ba2ad5e3bc347db1e8928