Lowerature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronics

Cheng, P.-H.P.-H.ChengWang, C.-I.C.-I.WangLing, C.-H.C.-H.LingLu, C.-H.C.-H.LuYin, Y.-T.Y.-T.YinChen, M.-J.M.-J.ChenMIIN-JANG CHEN2021-02-042021-02-042019https://www.scopus.com/inward/record.url?eid=2-s2.0-85078372333&partnerID=40&md5=54f40a047756df1039c2059220b27c7bhttps://scholars.lib.ntu.edu.tw/handle/123456789/546712Lowerature Conformal Atomic Layer Etching of Si with a Damage-Free Surface for Next-Generation Atomic-Scale Electronicsjournal article10.1021/acsanm.9b009442-s2.0-85078372333