Lin, Ching-FuhChing-FuhLinSu, Yi-ShinYi-ShinSuWu, Chao-HsinChao-HsinWuChang, Yu-ChiaYu-ChiaChang2009-03-182018-07-062009-03-182018-07-06200400214922http://ntur.lib.ntu.edu.tw//handle/246246/145950http://ntur.lib.ntu.edu.tw/bitstream/246246/145950/1/63.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-10844237368&doi=10.1143%2fJJAP.43.7032&partnerID=40&md5=fea5b339f7e9b4998380f570a78e55aaThe thickness of the separate confinement heterostructure (SCH) layer is found to have a significant influence on the carrier distribution among InGaAsP multiple quantum wells in laser diodes. When the SCH layer is 120nm thick, the carrier distribution of the fabricated laser diodes favors quantum wells near the n-cladding layer. When the thickness of the SCH layer is reduced to 20 nm, the carrier distribution of the fabricated laser diodes favors quantum wells near the p-cladding layer. Our experiments indicate that the carrier distribution of a fabricated laser diode can be engineered using an SCH layer of appropriate thickness.application/pdf144859 bytesapplication/pdfen-USCarrier distribution; Laser diode; Multiple quantum wells; Nonidentical multiple quantum wells; Separate confinement heterosturctureCladding (coating); Electric currents; Heterojunctions; Light absorption; Semiconducting indium compounds; Semiconductor lasers; Carrier distribution; Fabry-Perot laser diodes; Nonidentical multiple quantum wells; Separate confinement heterostructure; Semiconductor quantum wellsjournal article10.1143/JJAP.43.70322-s2.0-10844237368http://ntur.lib.ntu.edu.tw/bitstream/246246/145950/1/63.pdf