Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric

Chang, Y.C.Y.C.ChangChang, W.H.W.H.ChangChiu, H.C.H.C.ChiuTung, L.T.L.T.TungLee, C.H.C.H.LeeShiu, K.H.K.H.ShiuHong, M.M.HongKwo, J.J.KwoMINGHWEI HONGTsai, C.C.C.C.Tsai2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443416Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectricjournal article10.1063/1.29692822-s2.0-51849108058https://www.scopus.com/inward/record.uri?eid=2-s2.0-51849108058&doi=10.1063%2f1.2969282&partnerID=40&md5=8699f075dd9b993fb231917ff628ce84