MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD

Lee, Kun YuKun YuLeeLee, WCWCLeeLin, TDTDLinLee, CSCSLeeChang, YCYCChangLee, YJYJLeeHuang, MLMLHuangWu, YDYDWuMINGHWEI HONGKwo, JJKwo2018-09-102018-09-102007http://scholars.lib.ntu.edu.tw/handle/123456789/331384MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALDconference paper