Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Li, J.-Y.J.-Y.LiSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-76549130404&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350501Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVDconference paper10.1109/DRC.2009.5354859