Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device

H. J. HungJ. B. kuoD. ChenC. T. TsaiC. S. YehJAMES-B KUO2018-09-102018-09-102010-05http://scholars.lib.ntu.edu.tw/handle/123456789/359227[SDGs]SDG14Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS devicejournal article10.1016/j.sse.2009.11.0012-s2.0-77949335987WOS:000276754100022