Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics

Ren, FFRenAbernathy, CRCRAbernathyMacKenzie, JDJDMacKenzieGila, BPBPGilaPearton, SJSJPeartonMINGHWEI HONGMarcus, MAMAMarcusSchurman, MJMJSchurmanBaca, AGAGBacaShul, RJRJShul2018-09-102018-09-101998http://scholars.lib.ntu.edu.tw/handle/123456789/340168Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectricsjournal article