李嗣涔臺灣大學：電子工程學研究所張格致Chang, Ke-ChihKe-ChihChang2007-11-272018-07-102007-11-272018-07-102006http://ntur.lib.ntu.edu.tw//handle/246246/57725本篇論文中之矽奈米線(SiNW)，是利用金奈米顆粒當作催化劑，再經由VLS 機制成長出來的。在基板上的金奈米顆粒，其密度可經由金的沉積時間來控制。在本論文中將討論使用不同直徑的金奈米顆粒當催化劑，而生長出的不摻雜及P型摻雜的矽奈米線之成長特性。此外，並利用Focus Ion Beam (FIB)生長導線來連接矽奈米線與測試探針區(Pad)。再量測矽奈米線場效電晶體的I-V特性。矽奈米線的長度與寬度以及摻雜濃度均會對矽奈米線場效電晶體的I-V特性產生影響，其影響的機制與結果也會有合理的解釋與分析。The silicon nanowires (SiNWs) with Au nanoparticles as catalyst are grown via vapor-liquid-solid (VLS) mechanism by low pressure chemical vapor deposition (LPCVD). The density of Au nanoparticles as catalyst on the substrate can be controlled by the Au deposition time. The growth windows of un-doped and p-type doped silicon nanowires with different diameters of Au nanoparticles as catalyst are investigated. The electrical connection between silicon nanowire and test pads are deposited by focus ion beam (FIB). Then the I-V characteristics of silicon nanowire field effect transistor are measured. The effects of the silicon nanowire length, width and doping concentration on I-V characteristics of silicon nanowire field effect transistor are also discussed.CHAPTER 1 INTRODUCTION 9 CHAPTER 2 EXPERIMENTAL 12 2.1 SUBSTRATE AND OXIDATION 13 2.2 CONTACT PAD PATTERN 14 2.3 AU CATALYST 16 2.3.1 Au-Si Eutectic System 18 2.3.2 The Au nano-particles density versus time 21 2.4 DEPOSITION SYSTEM 22 2.4.1 The pressure effect on the growth of SiNWs 28 2.4.2 The growth of intrinsic SiNW and growth window 35 2.4.3 The growth of P-doped SiNW and growth window 37 2.5 FOCUS ION BEAM (FIB) 39 2.5.1 Operation Principle 39 2.5.2 System Component 39 2.5.3 Basic Function 41 2.5.4. Main Disadvantage 42 2.5.5. Deposition Procedures 43 2.6 CURRENT – VOLTAGE CHARACTERISTICS 44 CHAPTER 3 THE GROWTH AND ELECTRICAL CHARACTERISTICS OF SINWS 45 3-1 THE CHARACTERISTICS OF UNDOPED SINWS 46 3-2 THE CHARACTERISTICS OF LIGHT B-DOPED SINW 51 3-3 THE CHARACTERISTICS OF HEAVILY B-DOPED SINW 60 CHAPTER 4 THE TRANSPORT PHENOMENA OF SINWS 68 4.1 SCHOTTKY CONTACT 68 4.1.1 Schottky Barrier type 69 4.1.2 Ohmic Contact type 72 4.2 THE NANOWIRE RESISTIVITY 73 4.3 GATE VOLTAGE DEPENDENCE TRANSPORT 78 4.4 PHOTO CURRENT 82 4.5 I-V CHARACTERISTICS AT LOWER TEMPERATURE 84 CHAPTER 5 CONCLUSION 86 REFERENCES 892841385 bytesapplication/pdfen-US矽奈米線場效電晶體Silicon NanowireField Effect TransistorVLSLPCVDFIBI-V characteristicsthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57725/1/ntu-95-P93943009-1.pdf