胡振國臺灣大學：電子工程學研究所吳東駿Wu, Tung-CungTung-CungWu2007-11-272018-07-102007-11-272018-07-102007http://ntur.lib.ntu.edu.tw//handle/246246/57232TFT-LCD目前已經廣泛的被運用在很多3C產品上如手機,螢幕,電視機等等,而現今TFT製程還是多數用a-Si:H,本論文即是對低溫沈積的介電質元件特性做一討論研究。 第一章將針對TFT做基本介紹,以及TFT操作時的元件特性與TFT製作流程簡介。 第二章會對MOS的電容元件其基本特性作概略的介紹,以及所需得到interface trap density 的方法。 第三章主要探討實驗的部分,為對低溫介沈積的介電質加以偏壓以及加熱回火兩部分,在加偏壓部分有分為先加正偏壓,或是先加負偏壓,還是先加正偏壓再加負偏壓,或是先加負偏壓在加正偏壓等,實驗來探討在加偏壓情形下,電荷在低溫沈積介電質中的不同分佈情況,在加熱回火部分則可以發現在加熱至某一溫度時,會接近恢復未加偏壓的特性。 第四章即為本論文的結論,建議及未來的工作項目。TFT- LCD at present already extensive exerted be like mobile on many 3C products, screen, television and so on, and TFT process most used for a- Si: H now. In this thesis, we will discuss Low Temperature Dielectrics device characteristic used in Thin-Film Transistors. Chapter 1 will direct to TFT make basically introduction, and TFT operation's device characteristic and TFT fabricate flow introduction. Chapter 2 is MOS capacitance's its basic characteristic do rough introduction, and get interface trap density method. Chapter 3 chief inquires into experiences session, which is divided low temperature Dielectrics add with voltage bias and anneal two parts. There is divided into first plus positive bias at addition voltage bias' part, or first plus negative bias, or first plus positive bias again then plus negative bias, or first plus negative bias then at addition positive bias on the gate insulator layer. The experience will be discussed under applying voltage bias, charges change in the different situation at low temperature dielectrics. Above certain temperature can back to the initial one. In the last chapter, conclusion and suggestion for feature work are given.口試委員會審定書 і 誌謝 ii 中文摘要 iii 英文摘要 iv Chapter1 Introduction 1 1-1 Background 1 1-2 Device structure 2 1-3 Low temperature process 3 Chapter2 Characteristics of MOS Capacitors 8 2-1 Introduction 8 2-2 C-V characteristics 9 2-3 Interface trap density extraction method 10 Chapter3 Reliability of Low Temperature Dielectrics for Amorphous Silicon Thin Film Transistors 17 3-1 Introduction 18 3-2 Bias Effects 19 3-2-1 Consecutive positive bias 19 3-2-2 Positive bias-stay for a long time-negative bias 20 3-2-3 Positive bias-negative bias 23 3-2-4 Negative bias-stay for a long time-positive bias 25 3-2-5 Negative bias-positive bias 26 3-3 Anneal Effects 27 3-3-1 Positive bias-negative bias 27 3-3-2 Negative bias-stay for a long time-positive bias 29 3-3-3 Negative bias-positive bias 29 3-3-4 Negative bias-positive bias 30 3-4 Summary 31 Chapter4 Conclusions and suggestion for future work 75 Reference 77855252 bytesapplication/pdfen-US薄膜電晶體低溫介電質金氧半結構可靠度電容TFT-LCDLow Temperature DielectricsMetal-Oxide-Semiconductor (MOS) StructuresMOS capacitanceReliabilitythesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57232/1/ntu-96-P94943010-1.pdf