Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

Passlack, M.M.PasslackMINGHWEI HONGMannaerts, J.P.J.P.Mannaerts2019-12-272019-12-271996https://scholars.lib.ntu.edu.tw/handle/123456789/443496Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxyjournal article10.1063/1.1157252-s2.0-0000465918https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000465918&doi=10.1063%2f1.115725&partnerID=40&md5=67800e1dbda348ec7eeb5929ea459414