藍崇文2006-07-252018-06-282006-07-252018-06-282004-05-28http://ntur.lib.ntu.edu.tw//handle/246246/9393高品質單晶的生長及摻雜控制乃至於製成的最佳化，對於非線性 光學晶體在工業上應用扮有極為重要的角色。然而在自然融熔態生長 的晶體，或多或少都會偏離化學計量組成，形成對位缺陷。此對位缺 陷對晶體的性質，尤其在元件的加工及應用上，有極大的不良影響。 此外，在摻雜的應用上，更因為摻雜離子在固體及液體中的溶解度不 同，造成偏析及晶體的不均勻性。因此本計畫將使用可視化的水平區 熔系統，以等計量比鈮酸鋰單晶作為生長對象，來進行摻雜均勻的等 計量比晶體生長，以期望能得到低耗能且摻雜均勻的等計量比單晶體 生長技術，並輔以電腦模擬計算，發展雙層的系統熱流模式，並分析 最佳化晶體生長程序，以期開發高效率低耗能的等計量且均勻性高的單晶技術。Growing of high quality single crystal, controlling of dopant segregation, and optimizing the growing process play an important role in industrial application of nonlinear optical crystals. However, crystals growing from the melting ones always distract from its stoichiometric composition and have anti-site defect. This anti-site defect has bad effect on the properties of crystals, especially on its application. In addition, because the dopant has different solubility in solid and liquid, it will make segregation and non-uniform of crystals when doping. Through the process by using visual horizontal zone melting method to get stoichiometric lithium niobate single crystal, we expect to get stoichiometric single crystal growing technique with low energy cost, high efficiency, and uniform dopant concentration. Besides doing the experiment, we also develop two-level numerical method to simulate the thermal and flow field of the crystal growth and analyze the optimum crystal growing process. We expect to get the single crystal growing technique with low energy cost, high efficiency, and uniform dopant concentration.application/pdf1283019 bytesapplication/pdfzh-TW國立臺灣大學化學工程學系暨研究所reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/9393/1/922214E002038.pdf