CHEE-WEE LIUCheng, T.-H.T.-H.ChengKuo, P.-S.P.-S.KuoKo, C.-Y.C.-Y.KoChen, C.-Y.C.-Y.ChenCHEE-WEE LIU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-66549128992&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350487The band edge emission with the peak at 1.15 μm is observed at room temperature from monocrystalline silicon solar cell at forward bias. The electroluminescence spectra can be fitted by electron hole plasma recombination model. The temporal response of electroluminescence is used to characterize the minority carrier lifetime by fitting the time evolution of radiative recombination using the Shockley-Read-Hall, radiative, and Auger recombination models. The minority carrier lifetime is almost constant (1.8 ms) for excess carrier density lower than 4× 1015 cm-3, and then decreases at higher concentration. © 2009 American Institute of Physics.[SDGs]SDG7Auger recombination; Band-edge emissions; Electroluminescence spectra; Electron hole plasma; Excess carriers; Forward bias; Minority carrier lifetimes; Monocrystalline silicon solar cells; Radiative recombination; Room temperature; Shockley-Read-Hall; Temporal response; Time evolutions; Electroluminescence; Emission spectroscopy; Light emission; Photovoltaic cells; Semiconductor quantum dots; Silicon solar cells; Solar cells; Carrier lifetimejournal article10.1063/1.3117523