2006-01-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/707677摘要：由於目前標準的高效率多接面太陽能電池為InGaP/GaAs/Ge三接面電池，係以GaAs基材料為主。未來往更高功率更多接面太陽電池發展時，在GaAs能隙以下尚缺乏能夠與GaAs晶格匹配、具優良光電特性的塊材半導體材料。本計畫的目的即為開發能夠填補此一空隙的1-eV能隙半導體材料。過去雖有InGaAsN 1eV材料的研究報導，但由於加N所造成的缺陷，一直未能在光電品質上達到突破，本計畫將嘗試新型InGaAsNSb五元化合物半導體材料。利用Sb的加入，來減少In的成份，避免退火所造成的藍位移以降低加N所造成的缺陷。我們將以具RF電漿N源、Sb裂解管的氣態源分子束磊晶機來成長五元材料。尋求成長的最佳條件與極限，並將據以成長、製作能隙為1-eV的InGaAsNSb太陽電池。<br> Abstract: High efficiency multijunction terrestrial concentrator solar cell is an important technology for the future energy resources. Current standard cell is composed of InGaP, GaAs and Ge junctions and can reach an efficiency of ~30%. However, on the road toward more efficient cells, there is still a “missing gap” between Ge (0.74 eV) and GaAs (1.42 eV), in which high quality bulk materials lattice-matched to GaAs are not available yet. The purpose of this proposal is to develop a novel material for this missing gap, a five-element diluted nitride alloy – InGaAsNSb. This approach is based on a previous studied diluted nitride material InGaAsN. The incorporation of N into the alloy can reduce the energy gap and lattice constant simultaneously and thus 1-eV InGaAsN lattice-matched to GaAs is achieved. However, the N incorporation also results in defects and deteriorated material quality. For solar cell applications, as evident in previous reports in literature, a major breakthrough on material quality is still in demand urgently. In this proposal, we will use Sb to reduce the In composition in the alloy, which may reduce the blueshift in energy gap due to the annealing. The N composition and the accompany defects can thus be reduced. The five-element alloys will be grown by gas source molecular beam epitaxy with RF plasma N source and Sb cracker. We will find the optimum growth conditions for the fabrication of 1-eV InGaAsNSb solar cells with high performances.太陽電池聚光型太陽電池圖騰式太陽電池低含氮化合物半導體砷氮化銦鎵銻砷氮化銦鎵solar cellconcentrator celltandem celldiluted nitridesInGaAsNInGaAsNSb