Influence of laser annealing on defect-related luminescence of InGaN epilayers

CHIH-CHUNG YANG2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-79953245947&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/363380Influence of laser annealing on defect-related luminescence of InGaN epilayersjournal article10.1016/j.jlumin.2011.03.022