國立臺灣大學電子工程學研究所林浩雄2006-07-262018-07-102006-07-262018-07-102003-10-31http://ntur.lib.ntu.edu.tw//handle/246246/19979本計畫研究以固態源分子束磊晶法在 砷化鎵基板上成長銻砷化鎵/砷化鎵第二型 量子井以及雷射二極體。在第二型量子井 的部分我們達到波長1300nm、半寬80meV 的室溫光激螢光譜。單量子井雷射的室溫 振盪波長達1292nm，起振電流密度達300 A/cmP 2 P。此外，我們也研究銻砷化鎵/砷化 鎵第二型異質結構的能帶接合。我們首先 提出一個外插法來去除這種量子井結構中 因載子分離電場所造成的光激螢光譜的藍 位移，以獲取平能帶狀況下的光子遷移能 量。然後再藉由比較不同井寬量子井的平 能帶遷移能量以獲取異質結構價電帶不連 續佔能隙差的比例，QBVB。我們所獲得的QBVB 值為1.32。In this study, GaAsSb/GaAs type-II quantum wells and laser devices have been successfully grown and fabricated. The photoluminescence emission wavelength of the type-II quantum well reaches 1300m with a FWHM of 80 meV. On the results of the type II GaAsSb/GaAs single quantum-well laser diode, an emission wavelength of 1292nm and a low threshold current density of 300A/cmP 2 P are demonstrated at room temperature. The band offset of the type-II GaAsB0.7BSbB0.3B/GaAs quantum well is also studied. We propose an extrapolation method to remove the band-bending effect and determine the flat-band transition energy of the type-II quantum well from photoluminescence (PL) measurement. Then, we compare the flat-band transition energy of type-II GaAsB0.7BSbB0.3B/GaAs QW with different quantum well thickness to extract the valence-band-offset ratio of the heterostructure. The obtained valence-band-offset ratio is 1.32.application/pdf259814 bytesapplication/pdfzh-TW國立臺灣大學電子工程學研究所分子束磊晶含銻化合物半導體銻砷化鎵量子井能帶接合價電帶不 連續molecular beam epitaxySb-based compound semiconductorGaAsSb quantum wellband-lineupvalence band discontinuityreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/19979/1/912120E002004.pdf