A. KrierM. StoneQ. D. ZhuangP. W. LiuG. TsaiHAO-HSIUNG LIN2018-09-102018-09-102006-08https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748267676&doi=10.1063%2f1.2339036&partnerID=40&md5=de42ae2c24a9b5c03888d4e757837c70Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 μm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 μm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output. © 2006 American Institute of Physics.Deposition; Epitaxial growth; Indium compounds; Light emitting diodes; Semiconductor quantum wells; Confined holes; Injection current; Surface exposure; Electroluminescencejournal article10.1063/1.23390362-s2.0-33748267676WOS:000240236600010