Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors

CHEE-WEE LIUMa, R.M.R.M.MaPeng, R.M.R.M.PengWen, X.N.X.N.WenDai, L.L.DaiLiu, C.C.LiuSun, T.T.SunXu, W.J.W.J.XuQin, G.G.G.G.QinCHEE-WEE LIU2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-79955526400&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/358239Ultralow-power complementary metal-oxide-semiconductor inverters constructed on schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistorsjournal article10.1166/jnn.2010.2541