Chattopadhyay S.Chien S.C.Chen L.C.Chen K.H.Lee H.Y.LI-CHYONG CHEN2022-08-092022-08-09200209259635https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036508105&doi=10.1016%2fS0925-9635%2801%2900606-9&partnerID=40&md5=77fc2c12f7f674986feeee954c689613https://scholars.lib.ntu.edu.tw/handle/123456789/616412Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties. © 2002 Elsevier Science B.V. All rights reserved.Microstructure;Photoelectron spectroscopy;Physical vapour deposition;Thermal conductivityThermal diffusivity;Microstructure;Silicon;Thin films;Diamonds;cutting tool;diamond coating;microstructure;thermal conductivity;vapor depositionjournal article10.1016/S0925-9635(01)00606-92-s2.0-0036508105