Ho C.-HYUH-RENN WU2022-04-252022-04-25202121583234https://www.scopus.com/inward/record.uri?eid=2-s2.0-85116328278&doi=10.1109%2fNUSOD52207.2021.9541503&partnerID=40&md5=4e2e865ac0ecf8b3f875a2d2e6134ecfhttps://scholars.lib.ntu.edu.tw/handle/123456789/607378μ-LED's efficiency is enormously dependent on the chip size, which is believed to be the influence of sidewall traps. However, the decrease of IQE in AlInGaP based red LED is much stronger than nitride based LEDs. This paper examines the role of random alloy fluctuation with our 2D simulation software for the whole LED chip size to extract the major factors leading to the large IQE discrepancy between nitride-based and AlGaInP based LEDs. The design rule of the vertical LEDs to avoid the sidewall influences of μ-LED will be proposed in the presentation. ? 2021 IEEE.AlInGaPInGaNpiezoelectric effectrandom alloy fluctuationsidewall effectμLEDAluminum alloysComputer softwareEfficiencyGallium alloysIII-V semiconductorsIndium alloysLight emitting diodesMEMSNitridesSemiconductor alloysAlloy fluctuationChip sizesLED efficienciesNitride based LEDOptimisationsRandom alloyRandom alloy fluctuationSidewall effectsVertical-typeΜLEDPiezoelectricity[SDGs]SDG7conference paper10.1109/NUSOD52207.2021.95415032-s2.0-85116328278