Huang, Wen ChunWen ChunHuangTseng, Zi ChunZi ChunTsengWEN-JENG HSUEHLiao, Su YuSu YuLiaoHuang, Chun YingChun YingHuang2023-06-282023-06-282023-01-0100189383https://scholars.lib.ntu.edu.tw/handle/123456789/633176Indium–gallium–zinc oxide (IGZO) photodetectors have been mostly studied in the ultraviolet region and rarely in the X-ray region. This study fabricates IGZO X-ray detectors on glass substrates using different post-deposition annealing (PDA) times. The photo-to-dark current ratio increases significantly from 2.6 to 392.3 after PDA because of a considerable reduction of the deep-level states. There are fewer residual electrons in the conduction band and recombination centers in the middle of the bandgap are eliminated. An IGZO X-ray detector with optimal PDA time has a sensitivity of 8.5 <inline-formula> <tex-math notation="LaTeX">$\times$</tex-math> </inline-formula> 10<inline-formula> <tex-math notation="LaTeX">$^{-\text{3}}$</tex-math> </inline-formula> <inline-formula> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula>C/(mGy<inline-formula> <tex-math notation="LaTeX">$\cdot$</tex-math> </inline-formula>cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}\text{)}$</tex-math> </inline-formula> and a rise/decay time of 5.1/12.2 s with a bias of 10 V at a dose rate of 100 mGy/s. This result shows that IGZO is eminently suited to applications for X-ray detection.Dark current | Detectors | Indium–gallium–zinc oxide (IGZO) | Performance evaluation | Photoconductivity | Photonic band gap | post-annealing | Sensitivity | X-ray detectors | X-ray detectorsjournal article10.1109/TED.2023.32790542-s2.0-85161007549https://api.elsevier.com/content/abstract/scopus_id/85161007549