林浩雄臺灣大學：電子工程學研究所馬大鈞Ma, Da-JungDa-JungMa2007-11-272018-07-102007-11-272018-07-102004http://ntur.lib.ntu.edu.tw//handle/246246/57327本論文針對用於DVD光學讀寫頭之PDIC (Photo- Detector Integrated Circuit)內部的光偵測器元件，建構一套量測系統，藉以量測其頻譜反應。此外我們也建立一套程式以模擬光偵測器之反應度(responsivity)藉以擷取各項光偵測器重要物理參數，包括絕緣層厚度、載子擴散長度、元件結構等。程式中包括利用傳輸矩陣法(transmission matrix method)來估計入射光在具有介電層材料的偵測器中之反射與吸收，以及求解連續性方程式來處理所吸收少數載子的分佈與所收集到的光電流。利用這套程式，我們成它a模擬實際的PDIC元件，並完成重要元件參數的擷取。In this thesis, the characterization and simulation for Si photodetectors in PDIC (photodetector integrated circuit) designed for DVD pick-up heads have been studied. A measurement system was set up to characterize the responsivity spectrum of commercial PDIC photodetectors. Simulation programs based on transmission matrix method and continuity equation were also developed to calculate the light reflection and absorption in the dielectrics and semiconductor, the photo-generated carrier distributions and the collection currents. The simulation programs were successfully used to fit the experimental responsivity spectrum so as to extract device parameters including the dielectric thickness, minority carrier diffusion length, surface recombination velocity and so on. The parameters were presented and can be utilized to optimize the structure of the PDIC photodetectors.目錄 中文摘要---------------------------------------------------------------------------I Abstract---------------------------------------------------------------------------II 目錄-------------------------------------------------------------------------------III 附表索引------------------------------------------------------------------------V 附圖索引------------------------------------------------------------------------VI 第一章 緒論----------------------------------------------------------------------1 第二章 理論與模擬程式的建立--------------------------------------------12 2-1 求解少數載子濃度分佈函數與擴散電流------------------12 2-2 介電材料層反射率的計算------------------------------------16 第三章 模擬結果與討論-----------------------------------------------------25 3-1 表面復合速率對PD反應度頻譜的影響-------------------25 3-2 半導體內空乏區位置對PD反應度頻譜的影響----------26 3-3 SiO2厚度對PD反應度頻譜的影響--------------------------27 3-4 少數載子擴散長度對反應度頻譜的影響------------------28 3-5 兩組PN junction構成的PD之模擬與探討----------------29 3-6 三組PN junction構成的PD之模擬與探討----------------30 第四章 PD反應度量測與擬合結果----------------------------------------46 4-1實驗設置與量測方法-------------------------------------------46 4-2 反應度量測結果------------------------------------------------47 4-3 擬合之流程與演算法------------------------------------------49 4-4 擬合結果與討論------------------------------------------------51 第五章 結論--------------------------------------------------------------------71 參考文獻-------------------------------------------------------------------------72 附錄A 連續方程式一般解之齊性解和特解發生重根情形之解 決方法-----------------------------------------------------------------761709434 bytesapplication/pdfen-US光偵測器光電轉換晶片光學讀取頭optical pick-up headPDICphotodetectorthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/57327/1/ntu-93-R91943095-1.pdf