Liu, Jin-ShungJin-ShungLiuWang, Jyh-ShyangJyh-ShyangWangHsieh, K. Y.K. Y.HsiehLin, Hao-HsiungHao-HsiungLin2009-03-182018-07-062009-03-182018-07-061999https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033207498&doi=10.1016%2fS0022-0248%2899%2900317-6&partnerID=40&md5=5eb0e081ecb4df971738da98f14ed4c6The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 μm InGaAs/InGaAsP strain-compensated multiple quantum well structures were studied by transmission electron microscopy (TEM), double crystal X-ray diffraction and photoluminescence measurements. It was found that high quality of quantum well structures can be obtained at a lower growth temperature. A higher growth temperature caused an immiscible growth for the InGaAsP alloy from the observation of the TEM images. As a result, the optical and structural quality of the quantum well structure was drastically degraded.application/pdf420283 bytesapplication/pdfen-USCrystal structure; Molecular beam epitaxy; Photoluminescence; Semiconducting indium gallium arsenide; Semiconductor growth; Thermal effects; Transmission electron microscopy; X ray diffraction analysis; Gas source molecular beam epitaxy; Growth temperature; Photoluminescence measurement; Semiconductor quantum wellsjournal article10.1016/S0022-0248(99)00317-62-s2.0-0033207498http://ntur.lib.ntu.edu.tw/bitstream/246246/146032/1/16.pdf