Dept. of Electr. Eng., National Taiwan Univ.Su, Hung-DerHung-DerSuChang, Shou-ZenShou-ZenChangSI-CHEN LEESun, Tai-PingTai-PingSun2007-04-192018-07-062007-04-192018-07-061995-0500135194http://ntur.lib.ntu.edu.tw//handle/246246/2007041910042598https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029304557&doi=10.1049%2fel%3a19950628&partnerID=40&md5=dbd4a00ad85d42f8870e8d8164328cd4The Au/Cr/a-SiNx:H/(n)InAs/GaAs metal-insulator-semiconductor (MIS) capacitor was fabricated as a basic element of charge injection devices using plasma enhanced chemical vapour deposition. The electrical properties of the capacitor were analysed as a function of temperature using high frequency (1MHz) capacitance-voltage measurements. It was demonstrated that the capacitor can still be biased into deep depletion at 180K. When this capacitor is used as an integrated infrared detector in a charge injection device, it exhibits the capacity to detect infrared signals at a temperature of 180K, higher than that of an InSb infrared detector (77 K), and the device can be cooled thermoelectrically. © 1995, IEE. All rights reserved.application/pdf316080 bytesapplication/pdfen-USIndium compounds; Infrared detectors; Metal- semiconductor-metal structures[SDGs]SDG7Annealing; Capacitance measurement; Chemical vapor deposition; Electric properties; Infrared detectors; MIS devices; Molecular beam epitaxy; Plasma applications; Semiconducting indium compounds; Semiconductor growth; Thermal effects; Voltage measurement; Charge injection devices; Integrated infrared detectors; Metal insulator semiconductor capacitor; Plasma enhanced chemical vapor deposition; Capacitorsjournal article10.1049/el:199506282-s2.0-0029304557http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042598/1/00390903.pdf