楊照彥臺灣大學：應用力學研究所陳志松Chen, Chi-SungChi-SungChen2007-11-292018-06-282007-11-292018-06-282007http://ntur.lib.ntu.edu.tw//handle/246246/61879本文以塑封球柵陣列構裝與基板內埋晶片構裝為主題，探討一序列階段性高溫製程之翹曲變形，利用實驗與數值模擬分析進行比對驗證，提出較具有影響力的製程作為設計的範本。實驗分析以自行架設之相移陰影疊紋量測系統進行高溫歷程之量測；數值分析以元素生與死法進行一序列串階段性製程之模擬。對於塑封球柵陣列構裝，考慮：BT (Bismalemide Triazine, BT)基板成形效應、黏晶、鑄模灌酯與迴焊製程；對於基板內埋晶片構裝，考慮：120℃晶片與基板之結合、180℃樹脂附銅膜與基板之熱壓合成形、電路鑽孔建構製程、預金屬化製程、金屬化製程、電路圖案化、綠漆塗佈成形、錫球窗口成形與迴焊製程。除此之外，對於BT基板的成形內應力效應，特別考慮其隨溫度產生的翹曲變形，還有，對於鑄模灌酯材料之特性，特別考慮化學模縮效應與玻璃轉化溫度效應，將可得到精準的預測，否則將得到錯誤的結果。A mechanical model followed a sequential manufacturing process was considered in order to simulate the warpage during a sequential steps of the assembly of a plastic encapsulated ball grid arrays (BGA) package, such as die attachment, encapsulation, and solder reflow process. A chip in substrate package, which including die attachment, resin coated copper (RCC) lamination, structuring, pre-metallization, metallization, patterning, solder mask curing, solder opening and solder reflow was used as a model IC package. Experimental measurement analysis (EMA) of the thermal residual warp field of the substrate caused by the coefficient of thermal expansion (CTE) mismatch among these materials in processes are employed to validate models of finite element analysis (FEA) by the shadow moiré with phase stepping technique. Failure to incorporate chemical shrinkage of epoxy molding compound (EMC) or residual warp field of a sequential process into the numerical analysis leads to erroneous predictions of the warp behavior. With the help of the experimental measurements carried about the befitting level of sensitivity, and together with the numerical simulation which takes into account of the effects of chemical shrinkage of EMC and residual warp field of a sequential process, engineers will be able to predict residual warps as well as stresses field for every manufacturing process.目 錄 摘要………………………………………………………………. I 誌謝………………………………………………………………. IV 目錄………………………………………………………………. V 表目錄……………………………………………………………. VIII 圖目錄……………………………………………………………. IX 第一章 緒論……………………………………………………... 1 1-1研究動機 …………………………………………………. 1 1-2文獻回顧…………………………………………………... 3 1-3 研究目的與範疇………………………………………….. 9 第二章 相移陰影疊紋法…………………………..............13 2-1引言………………………………………………………... 13 2-2陰影疊紋法之原理………………………………………... 14 2-3陰影疊紋法之相移技術…………………………………... 15 2-4圖形量化於構裝體基板表面之影像處理步驟…………... 18 2-5消除剛體旋轉效應之三維表面重建……………………... 24 2-6相移陰影疊紋法與雷射位移量測儀之量測比較………... 27 2-7結語………………………………………………………... 28 第三章 塑封球柵陣列構裝之翹曲量測分析…………………... 40 3-1引言………………………………………………………... 40 3-2塑封球柵陣列構裝之簡介與試片之準備………………... 41 3-2-1球柵陣列構裝所面臨的問題…………………………..... 43 3-2-2試片之準備……………………………………………..... 44 3-3相移陰影疊紋法之高溫量測系統架設與實驗步驟……... 46 3-3-1實驗設備………………………………………………..... 46 3-3-2實驗架設………………………………………………..... 47 3-3-3實驗步驟………………………………………………..... 47 3-4實驗量測分析之結果……………………………………... 49 3-4-1 BT基板……………………………………………….. 49 3-4-2 BT基板+黏膠+晶片………………………………….. 50 3-4-3 BT基板+黏膠+晶片+鑄模灌酯……………………... 52 3-5結語………………………………………………………... 56 第四章 塑封球柵陣列構裝之翹曲模擬分析…………………... 87 4-1引言………………………………………………………... 87 4-2應用有限元素法於階段性製程整合之原理……………..... 87 4-2-1 公式推導……………………………………….......... 88 4-2-2 三維有限元素分析…………………………………….... 89 4-2-3電子構裝之熱彈性方程式…………………………....... 92 4-2-4 有限元素法分析步驟………………………………….... 97 4-2-5 跟隨階段性製程之模擬分析原理…………………….... 99 4-2-6 建立塑封球柵陣列構裝模型………………………….... 101 4-3數值模擬與實驗量測分析之結果比較……………………... 102 4-3-1 BT基板……………………………………………….. 102 4-3-2 BT基板+黏膠+晶片………………………………….. 103 4-3-3 BT基板+黏膠+晶片+鑄模灌酯……………………... 105 4-4結語……………………………………………………....... 109 第五章 基板內埋晶片構裝之翹曲模擬分析………………..... 119 5-1 引言…………………………………………………….... 119 5-2 基板內埋晶片構裝之簡介……………………………….. 120 5-3 力學模擬分析之結果…………………………………….. 123 5-3-1：BT基板+黏膠+晶片……………………………….. 125 5-3-2：BT基板+黏膠+晶片+RCC…………………………... 126 5-3-3：BT基板+黏膠+晶片+鑽孔………………………….. 128 5-3-4：BT基板+黏膠+晶片+鑽孔+預金屬化……………... 129 5-3-5：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化……… 129 5-3-6：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化+電路圖案化 ..............................................130 5-3-7：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化+電路圖案化+ 綠漆塗佈成形……………………........................ 134 5-3-8：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化+電路圖案化+ 綠漆塗佈成形+錫球窗口成形……………………............139 5-3-9：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化+電路圖案化+ 綠漆塗佈成形+錫球窗口成形+迴焊…………………………… 142 5-3-10：BT基板+黏膠+晶片+鑽孔+預金屬化+金屬化+電路圖案化+ 綠漆塗佈成形+錫球窗口成形+迴焊→成品………………….148 5-4結語…………………………………………………………………….149 第六章 結論與未來展望………………………………………... 186 6-1 結論……………………………………………………….. 186 6-2 未來展望………………………………………………….. 188 參考文獻…………………………………………………………… 190 簡歷………………………………………………………………. 1997191965 bytesapplication/pdfen-US塑封球柵陣列構裝基板內埋晶片構裝一序列階段性高溫製程相移陰影疊紋量測系統plastic encapsulated ball grid arrays (BGA)chip in substrate packagea sequential manufacturing processthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/61879/1/ntu-96-D89543007-1.pdf