Huang, Bo WeiBo WeiHuangFu, Zi HaoZi HaoFuKUN-YOU LIN2023-07-182023-07-182022-01-019784902339567https://scholars.lib.ntu.edu.tw/handle/123456789/633913A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-µm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25.1 dBm and a peak power-added efficiency (PAEmax) of 33.6%. Besides, 3-dB small-signal bandwidth and 1-dB Psat bandwidth are 75% and 51%, respectively.5G | GaAs | millimeter-wave | power amplifier | ultra-widebandconference paper2-s2.0-85146649452https://api.elsevier.com/content/abstract/scopus_id/85146649452