STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device

H. J. HungJ. I. LuJ. B. KuoG. S. LinC. S. YehC. T. TsaiM. MaJAMES-B KUO2018-09-102018-09-102008-11http://scholars.lib.ntu.edu.tw/handle/123456789/342567STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Deviceconference paper