Wang, Y.-T.Y.-T.WangCHI-TE LIANGYUAN-HUEI CHANG et al.2018-09-102018-09-10201209538984http://www.scopus.com/inward/record.url?eid=2-s2.0-84866511599&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/369278We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able to tune the 2DEG density and thus vary disorder and spin-splitting. Data for both the spin-resolved and spin-degenerate phase transitions are presented, the former collapsing to the latter with decreasing gate voltage and/or decreasing spin-splitting. The experimental results support a recent theory, based on modular symmetry, which predicts how the critical Hall conductivity varies with spin-splitting. © 2012 IOP Publishing Ltd.GaAs; Gate voltages; Hall conductivity; InAs; Self-assembled; Spin splittings; Temperature flow; Theoretical prediction; Two-dimensional electron gas (2DEG); Indium arsenide; Two dimensional; Electron gas; gallium; gallium arsenide; organoarsenic derivative; article; chemical model; chemistry; computer simulation; electron transport; flow kinetics; gas; methodology; temperature; Arsenicals; Computer Simulation; Electron Transport; Gallium; Gases; Models, Chemical; Rheology; Temperaturejournal article10.1088/0953-8984/24/40/405801229689702-s2.0-84866511599WOS:000309050700013