The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages

M.-H. LiaoC.-P. HsiehC.-C. LeeMING-HAN LIAO2021-12-302021-12-302017https://scholars.lib.ntu.edu.tw/handle/123456789/590712The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltagesjournal article