A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes

Lin, C.-H.C.-H.LinHsu, B.-C.B.-C.HsuLee, M.H.M.H.LeeLiu, C.W.C.W.Liu2009-03-252018-07-062009-03-252018-07-062001http://ntur.lib.ntu.edu.tw//handle/246246/148167application/pdf135239 bytesapplication/pdfen-USA Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodesjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/148167/1/22.pdf