Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defects

Stesmans, A.A.StesmansPierreux, D.D.PierreuxJaccodine, R. J.R. J.JaccodineMINN-TSONG LINDelph, T. J.T. J.Delph2019-12-272019-12-2720030003-6951https://scholars.lib.ntu.edu.tw/handle/123456789/443540Influence of in situ applied stress during thermal oxidation of (111)Si on P-b interface defectsjournal article10.1063/1.1555277WOS:000182570000034