Shiu, Shu-ChiaShu-ChiaShiuTsakalakos, LoucasLoucasTsakalakosHsiao, Chieh-YuChieh-YuHsiaoChao, Cha-HsinCha-HsinChaoHung, Shih-CheShih-CheHungLin, Ching-FuhChing-FuhLin2009-03-182018-07-062009-03-182018-07-062008http://ntur.lib.ntu.edu.tw//handle/246246/145995http://ntur.lib.ntu.edu.tw/bitstream/246246/145995/1/96.pdfWe demonstrate the method of transferring aligned single crystal silicon nanowires (SiNWs) to transparent substrate. The alignment of the transferred nanowires is almost identical to the original one. The density of the transferred SiNWs can achieve 3×107 nanowires/mm2. The low temperature fabrication processes are compatible for a wide range of substrates. The transmission coefficient below 10 % at a wide bandwidth, 400-1100 nm, was found in the transferred SiNWs. The high dense aligned SiNWs are promising for future photovoltaic applications.application/pdf1816026 bytesapplication/pdfen-USAligned; Bending stress; Electroless; Low temperature; Nanowires; SEM; Silicon; Transfer; Transmission spectrum; Transparent[SDGs]SDG7Electric wire; Nanostructured materials; Nanostructures; Nanotechnology; Nanowires; Photovoltaic effects; Plasma diagnostics; Powders; Silicon; Silicon wafers; Single crystals; Aligned; Bending stress; Electroless; Low temperature; SEM; Transfer; Transmission spectrum; Transparent; Substratesconference paper10.1117/12.794384http://ntur.lib.ntu.edu.tw/bitstream/246246/145995/1/96.pdf