Hwang, Y.-J.Y.-J.HwangLien, C.-H.C.-H.LienSinclair, M.W.M.W.SinclairGough, R.G.R.G.GoughKanoniuk, H.H.KanoniukHUEI WANGTAH HSIUNG CHU2020-06-042020-06-04200215311309https://scholars.lib.ntu.edu.tw/handle/123456789/497466https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036613087&doi=10.1109%2fLMWC.2002.1009997&partnerID=40&md5=1d16e788bb95e3b54105421d0acd83b5A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO frequency operation. It is fabricated on a 4-mil substrate using 0.15 μm GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is pumped. To our knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a similar result. Both the simulation and measurement results are shown in good agreement.Millimeter-wave mixer; MMIC[SDGs]SDG7Computer aided network analysis; Diodes; Electric frequency control; Electric losses; Harmonic analysis; High electron mobility transistors; Millimeter wave devices; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Conversion loss; Millimeter wave mixer; Monolithic diode mixer; On wafer measurement; Subharmonically pumped diode mixer; Mixer circuitsA 78-114 GHz monolithic subharmonically pumped GaAs-based HEMT diode mixerother10.1109/LMWC.2002.10099972-s2.0-0036613087