The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design

Liao, M.-H.M.-H.LiaoHuang, S.C.S.C.HuangLiu, C.Y.C.Y.LiuChen, P.G.P.G.ChenKao, S.C.S.C.KaoLien, C.C.Lien2019-03-112019-03-112014https://scholars.lib.ntu.edu.tw/handle/123456789/404497The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designconference proceedings10.1109/VLSIT.2014.68943752-s2.0-84907684371