Chen, Chia ChunChia ChunChenYei, Jia WeiJia WeiYeiFu, Zi HaoZi HaoFuKUN-YOU LIN2023-11-082023-11-082023-01-019798350324402https://scholars.lib.ntu.edu.tw/handle/123456789/636988This paper presents a miniaturized high-power handling CMOS T/R switch. The chip size can be miniaturized by adapting the stacked inductor to compensate for the non-ideal switching characteristics of the transistors in both transmit and receive paths for the asymmetric T/R switch. The minimum insertion loss is 1.8 dB, and 1-dB bandwidth is 68% from 19.5 GHz to 39.5 GHz in Tx mode. For the Rx mode, the minimum insertion loss is 2 dB, and the 1-dB bandwidth is 51% from 25 GHz to 42 GHz. The measured Tx mode IP1dB is 30 dBm at 28 GHz and more than 25 dBm within the operating bandwidth.asymmetric T/R switch | CMOS | high-power | stacked inductorconference paper10.1109/RFIT58767.2023.102433792-s2.0-85174261312https://api.elsevier.com/content/abstract/scopus_id/85174261312