Laroche, D.D.LarocheHuang, S.-H.S.-H.HuangNielsen, E.E.NielsenCHEE-WEE LIUJIUN-YUN LILu, T.M.T.M.Lu2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84927597426&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/393208https://www.scopus.com/inward/record.uri?eid=2-s2.0-84927597426&doi=10.1063%2f1.4917296&partnerID=40&md5=f52887c3c5c73769cd1d618ac51656c7We report the design, the fabrication, and the magneto-transport study of an electron bilayer system embedded in an undoped Si/SiGe double-quantum-well heterostructure. Combined Hall densities (nHall) ranging from 2.6-×-1010-cm-2 to 2.7-×-1011-cm-2 were achieved, yielding a maximal combined Hall mobility (μHall) of 7.7-×-105-cm2/(V · s) at the highest density. Simultaneous electron population of both quantum wells is clearly observed through a Hall mobility drop as the Hall density is increased to nHall > 3.3-×-1010-cm-2, consistent with Schrödinger-Poisson simulations. The integer and fractional quantum Hall effects are observed in the device, and single-layer behavior is observed when both layers have comparable densities, either due to spontaneous interlayer coherence or to the symmetric-antisymmetric gap. © 2015 AIP Publishing LLC.Hall mobility; Quantum chemistry; Quantum Hall effect; Quantum theory; Silicon; Anti-symmetric; Bilayer systems; Double quantum well; Electron population; Fractional quantum Hall effects; Magnetotransports; Si/SiGe; Single layer; Semiconductor quantum wellsjournal article10.1063/1.4917296000369512-s2.0-84927597426